AlN-based dilute magnetic semiconductors

被引：9
|
作者：
Frazier, RM [1 ]
Thaler, GT
Gila, BP
Stapleton, J
Overberg, ME
Abernathy, OR
Pearton, SJ
Ren, F
Zavada, JM
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 04期
关键词：
AlMnN; AlCrN; magnetic semiconductors;
D O I：
10.1007/s11664-005-0112-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AIMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-temperature magnetic behavior were obtained for both materials. Chromium was found to produce greater magnetic ordering as evidenced by a higher technical saturation. The AlCrN also exhibited a higher remanent magnetization and a M versus T behavior more typical of ferromagnetism than that observed for AIMnN. These results suggest that Cr is a superior dopant for formation of AIN-based, dilute magnetic semiconductors.
引用
收藏
页码：365 / 369
页数：5
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