AlN-based dilute magnetic semiconductors

AIMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-temperature magnetic behavior were obtained for both materials. Chromium was found to produce greater magnetic ordering as evidenced by a higher technical saturation. The AlCrN also exhibited a higher remanent magnetization and a M versus T behavior more typical of ferromagnetism than that observed for AIMnN. These results suggest that Cr is a superior dopant for formation of AIN-based, dilute magnetic semiconductors.