AlN-based dilute magnetic semiconductors

被引：9
|
作者：
Frazier, RM [1 ]
Thaler, GT
Gila, BP
Stapleton, J
Overberg, ME
Abernathy, OR
Pearton, SJ
Ren, F
Zavada, JM
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 04期
关键词：
AlMnN; AlCrN; magnetic semiconductors;
D O I：
10.1007/s11664-005-0112-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AIMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-temperature magnetic behavior were obtained for both materials. Chromium was found to produce greater magnetic ordering as evidenced by a higher technical saturation. The AlCrN also exhibited a higher remanent magnetization and a M versus T behavior more typical of ferromagnetism than that observed for AIMnN. These results suggest that Cr is a superior dopant for formation of AIN-based, dilute magnetic semiconductors.
引用
收藏
页码：365 / 369
页数：5
相关论文
共 50 条
  • [1] Dilute magnetic semiconductors based on InN
    Ney, A.
    Rajaram, R.
    Harris, J. S., Jr.
    Parkin, S. S. P.
    PHASE TRANSITIONS, 2006, 79 (9-10) : 785 - 791
  • [2] Ain-based dilute magnetic semiconductors
    Frazier, R
    Thaler, G
    Gila, B
    Stapleton, J
    Overberg, M
    Abernathy, CR
    Pearton, SJ
    Ren, F
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II, 2004, 2004 (02): : 17 - 23
  • [3] AIN-based dilute magnetic semiconductors
    R. M. Frazier
    G. T. Thaler
    B. P. Gila
    J. Stapleton
    M. E. Overberg
    C. R. Abernathy
    S. J. Pearton
    F. Ren
    J. M. Zavada
    Journal of Electronic Materials, 2005, 34 : 365 - 369
  • [4] Dilute magnetic semiconductors
    Dederichs, PH
    Sato, K
    Katayama-Yoshida, H
    PHASE TRANSITIONS, 2005, 78 (9-11) : 851 - 867
  • [5] AlN-based vacuum ultraviolet Schottky barrier AlN-based vacuum ultraviolet Schottky barrier photodetector photodetector
    Sun, Zhaolan
    Yang, Jing
    Zhang, Yuheng
    Liu, Zongshun
    Liang, Feng
    Chen, Ping
    Fu, Yuting
    Liu, Bing
    Zheng, Fu
    Liu, Xuefeng
    Zhao, Degang
    OPTICS EXPRESS, 2024, 32 (24): : 43729 - 43736
  • [6] Resonantly excited AlN-based microcantilevers for immunosensing
    Oliver, M. J.
    Hernando-Garcia, J.
    Ababneh, A.
    Seidel, H.
    Schmid, U.
    Andres, J. P.
    Pobedinskas, P.
    Haenen, K.
    Sanchez-Rojas, J. L.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2012, 18 (7-8): : 1089 - 1094
  • [7] Thermal properties of AlN-based atom chips
    Armijo, J.
    Alzar, C. L. Garrido
    Bouchoule, I.
    EUROPEAN PHYSICAL JOURNAL D, 2010, 56 (01): : 33 - 39
  • [8] Thermal properties of AlN-based atom chips
    J. Armijo
    C. L. Garrido Alzar
    I. Bouchoule
    The European Physical Journal D, 2010, 56 : 33 - 39
  • [9] Resonantly excited AlN-based microcantilevers for immunosensing
    M. J. Oliver
    J. Hernando-García
    A. Ababneh
    H. Seidel
    U. Schmid
    J. P. Andrés
    P. Pobedinskas
    K. Haenen
    J. L. Sánchez-Rojas
    Microsystem Technologies, 2012, 18 : 1089 - 1094
  • [10] AlN-based piezoelectric MEMS deformable mirror
    Zhang, Junning
    Zhang, Xinyue
    Wang, Yan
    Lv, Tunan
    Yu, Hongbin
    OPTICS LETTERS, 2023, 48 (18) : 4777 - 4780
12345