A new type of quantized Hall effect in layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3

被引：7

作者：

Sasaki, M ^{[1
]}

Miyajima, N

Negishi, H

Inoue, M

Kulbachinskii, VA

Suga, K

Narumi, Y

Kindo, K

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

[2] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys Dept, Moscow 119899, Russia

[3] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan

[4] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICA B | 2001年 / 298卷 / 1-4期

关键词：

layered semiconductor; quantized Hall effect; Sn-originated impurity band;

D O I：

10.1016/S0921-4526(01)00373-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured magnetotransports for layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3 at low temperature in magnetic fields up to 55T. Both crystals show clear Hall plateaus near the corresponding resistivity minima. Based on the existing band model, we propose a possible mechanism for Hall oscillation in these three-dimensional systems, in which Sn-originated resonant impurity band or lower valence band plays a crucial role. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：510 / 514

页数：5

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