A new type of quantized Hall effect in layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3

被引：7
|
作者：
Sasaki, M [1 ]
Miyajima, N
Negishi, H
Inoue, M
Kulbachinskii, VA
Suga, K
Narumi, Y
Kindo, K
机构：
[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan
[2] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys Dept, Moscow 119899, Russia
[3] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan
[4] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3050044, Japan
来源：
PHYSICA B | 2001年 / 298卷 / 1-4期
关键词：
layered semiconductor; quantized Hall effect; Sn-originated impurity band;
D O I：
10.1016/S0921-4526(01)00373-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have measured magnetotransports for layered semiconductors Bi2-xSnxTe3 and Sb2-xSnxTe3 at low temperature in magnetic fields up to 55T. Both crystals show clear Hall plateaus near the corresponding resistivity minima. Based on the existing band model, we propose a possible mechanism for Hall oscillation in these three-dimensional systems, in which Sn-originated resonant impurity band or lower valence band plays a crucial role. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：510 / 514
页数：5
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