Enhanced Two-Photon Absorption in Polycrystalline Silicon

被引:0
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作者
Mehta, Karan [1 ]
Orcutt, Jason [1 ]
Ram, Rajeev [1 ]
机构
[1] MIT, Elect Res Lab, Cambridge, MA USA
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss measurements of the two-photon absorption coefficient (beta) in polycrystalline silicon deposited in a scaled CMOS process; measurements in thin film, waveguides and microring resonators indicate beta is over two orders of magnitude larger than in crystalline silicon.
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