Review of Resonant Gate Driver in Power Conversion

被引：0

作者：

Sun, Bainan ^{[1
]}

Zhang, Zhe ^{[1
]}

Andersen, Michael A. E. ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Elect Engn, DK-2800 Lyngby, Denmark

来源：

2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA) | 2018年

关键词：

Resonant gate driver; GaN HEMT; power conversion; HIGH-FREQUENCY; CIRCUIT;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Resonant gate driver is a vital trend of research topic along with the development of high electron mobility transistor (HEMT). Compared with conventional gate driver, resonant gate driver achieves much lower power dissipation during switching transient and widely viewed as one essential technique for high frequency power conversion. This paper provides a state-of-art review and thorough comparison of different resonant gate driver topologies. Case study of two representative topologies is carried out. Application of resonant gate driver in Gallium Nitride (GaN) HEMT is discussed.

引用

页码：607 / 613

页数：7

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