Class-φ2 Power Amplifier With Resonant Gate Driver: High-Efficiency Power Amplifier for 50 MHz

被引：1
|
作者：
Ye, Zhechi [1 ]
Lin, Calvin H. [1 ]
Rivas-Davila, Juan [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE MICROWAVE MAGAZINE | 2024年 / 25卷 / 06期
关键词：
Radio frequency; Microwave integrated circuits; Power amplifiers; Logic gates; Microwave communication; Microwave amplifiers; Microwave filters;
D O I：
10.1109/MMM.2024.3379028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF power amplifiers (PAs) serve an important role for various applications, such as communication, induction heating, plasma generation, and wireless power transfer [1], [2], [3]. With the current demands for energy conservation, the importance of high-efficiency PAs has been ever increasing. Efficient power delivery alleviates the burden of thermal management, improving the system stability and increasing the power density. In this article, we present our first-place design for the Student Design Competition "High-Efficiency Power Amplifier for 50 MHz" in the 2023 IEEE International Microwave Symposium (IMS) in San Diego, CA, USA.
引用
收藏
页码：88 / 92
页数：5
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