Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

被引：0

作者：

Ni, J. Y. ^{[1
]}

Hao, Y. ^{[1
]}

Xue, J. S. ^{[1
]}

Xu, Z. H. ^{[1
]}

Zhang, Z. F. ^{[1
]}

Zhang, J. C. ^{[1
]}

Yang, L. A. ^{[1
]}

Zhang, J. F. ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlGaN/GaN; MOCVD; structure; electrical properties; SAPPHIRE; STRESS; BUFFER;

D O I：

10.1002/pssc.200983427

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high-temperature (HT) of 900 degrees C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT-AlN interlayers. Hall effect measurements and non-contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The sheet carrier density and Hall mobility continuously increased with the increase of the AlN interlayer number. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：4

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