Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

被引：0
|
作者：
Ni, J. Y. [1 ]
Hao, Y. [1 ]
Xue, J. S. [1 ]
Xu, Z. H. [1 ]
Zhang, Z. F. [1 ]
Zhang, J. C. [1 ]
Yang, L. A. [1 ]
Zhang, J. F. [1 ]
机构：
[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词：
AlGaN/GaN; MOCVD; structure; electrical properties; SAPPHIRE; STRESS; BUFFER;
D O I：
10.1002/pssc.200983427
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high-temperature (HT) of 900 degrees C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT-AlN interlayers. Hall effect measurements and non-contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The sheet carrier density and Hall mobility continuously increased with the increase of the AlN interlayer number. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页数：4
相关论文
共 50 条
  • [31] The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates
    Lei Li
    Lei Liu
    Lei Wang
    Ding Li
    Jie Song
    Ningyang Liu
    Weihua Chen
    Yuzhou Wang
    Zhijian Yang
    Xiaodong Hu
    Applied Physics A, 2012, 108 : 857 - 862
  • [32] Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
    Tiras, Engin
    Celik, Ozlem
    Mutlu, Selman
    Ardali, Sukru
    Lisesivdin, Sefer Bora
    Ozbay, Ekmel
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (06) : 733 - 744
  • [33] Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
    Arslan, Engin
    Safak, Yasemin
    Tascioglu, Ilke
    Uslu, Habibe
    Ozbay, Ekmel
    MICROELECTRONIC ENGINEERING, 2010, 87 (10) : 1997 - 2001
  • [34] Thermal stability of electrical properties in AlGaN/GaN heterostructures
    Shiojima, K
    Shigekawa, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 100 - 105
  • [35] Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures
    Tascioglu, I.
    Uslu, H.
    Safak, Y.
    Ozbay, E.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (06): : 859 - 862
  • [36] The effect of long-duration high-temperature annealing in an air ambient on the properties of AlGaN/GaN heterostructures
    Chen, D. J.
    Liu, B.
    Chen, G. Q.
    Xu, F.
    Xie, Z. L.
    Han, P.
    Zhang, R.
    Zheng, Y. D.
    Narayanamurti, V.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)
  • [37] Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures
    Wosko, Mateusz
    Paszkiewicz, Bogdan
    Paszkiewicz, Regina
    Tlaczala, Marek
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 306 - 310
  • [38] Effects of AlN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD
    Makaronidis, G
    MeAleese, C
    Barnard, JS
    Humphreys, CJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 309 - 312
  • [39] Electrical defects introduced during high-temperature irradiation of GaN and AlGaN
    Hayes, M
    Auret, FD
    Wu, L
    Meyer, WE
    Nel, JM
    Legodi, MJ
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 421 - 425
  • [40] Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
    Tulek, Remziye
    Ilgaz, Aykut
    Gokden, Sibel
    Teke, Ali
    Ozturk, Mustafa K.
    Kasap, Mehmet
    Ozcelik, Sleyman
    Arslan, Engin
    Ozbay, Ekmel
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
12345