Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

被引：0
|
作者：
Ni, J. Y. [1 ]
Hao, Y. [1 ]
Xue, J. S. [1 ]
Xu, Z. H. [1 ]
Zhang, Z. F. [1 ]
Zhang, J. C. [1 ]
Yang, L. A. [1 ]
Zhang, J. F. [1 ]
机构：
[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词：
AlGaN/GaN; MOCVD; structure; electrical properties; SAPPHIRE; STRESS; BUFFER;
D O I：
10.1002/pssc.200983427
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high-temperature (HT) of 900 degrees C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT-AlN interlayers. Hall effect measurements and non-contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The sheet carrier density and Hall mobility continuously increased with the increase of the AlN interlayer number. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：4
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