Nonlinear analysis of multiple ion-implanted GaAsFETs using volterra series approach

被引：0

作者：

Yanagawa, S ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Komukai Operat, Informat & Ind Syst & Serv Co, Kawasaki, Kanagawa 2108581, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2001年 / E84C卷 / 09期

关键词：

GaAsFET; ion-implantation; nonlinear analysis; intermodulation distortion; Volterra series;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nonlinear Volterra-series analysis of multiple ion-implanted GaAs FETs is given that relates carrier profile parameters of ion-implantation to nonlinear rf characteristics of a FET. Expressions for nonlinear coefficients of transconductance are derived from drain current-voltage characteristics of a multiple ion-implanted FET. Nonlinear transfer functions (NLTFs) are then obtained using Volterra series approach. Using these NLTFs third-order intermodulation distortion and power gain are explicitly given. A good agreement has been found between the calculation and the measurement for a medium power GaAs FET with a total gate width of 800 mum operated at 10-dB back off, verifying the usefulness of the present analysis.

引用

页码：1215 / 1226

页数：12

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