Optimization of nanoscale silicon waveguide fabrication

被引：0

作者：

Chen, Yao ^{[1
,2
]}

Feng, Junbo ^{[1
]}

Zhou, Zhiping ^{[1
,3
,4
]}

Yu, Jun ^{[2
]}

Summers, Christopher J. ^{[5
]}

Citrin, David S. ^{[4
,6
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China

[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Hubei, Peoples R China

[3] Peking Univ, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China

[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[5] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[6] Georgia Tech Lorraine, Georgia Tech CNRS, Unit Mixte Int 2958, F-57070 Metz, France

来源：

AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE | 2009年

关键词：

ETCH PROCESS; PLASMAS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple and effective technique was developed to improve the nanoscale silicon waveguide fabrication. 40 nanometer features with smooth and vertical sidewall are demonstrated. With this technique, nanoscale silicon grating coupler was obtained. (C)2008 Optical Society ofAmerica

引用

页数：3

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