Physical vapor transport of Bi2Te3 using elemental Bi and Te sources

被引：0
|
作者：
Concepcion, O. [1 ]
Vazquez, O. [1 ]
de Melo, O. [1 ]
Escobosa, A. [2 ]
机构：
[1] Univ La Habana, Fac Fis, Havana, Cuba
[2] CINVESTAV, SEES Ingn Elect, Mexico City, DF, Mexico
来源：
2015 IEEE INTERNATIONAL AUTUMN MEETING ON POWER, ELECTRONICS AND COMPUTING (ROPEC) | 2015年
关键词：
Topological insulator; Physical vapor transport; Bismuth telluride; TELLURIDE THIN-FILMS; TOPOLOGICAL INSULATOR; DEPOSITION; SURFACE;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A novel procedure to obtain micro and nanocrystals of Bi2Te3 is presented. The crystals are obtained by physical vapor transport using Bi and Te as sources. They were characterized by x-ray diffraction and scanning electron microscopy. Different kinds of structures as faceted crystals, strips and tubes were found at different temperatures. X-rays diffraction indicated that crystals were oriented with the (0 0 1) planes parallel to the surface.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] HETERODIFFUSION OF SELENIUM IN BI2TE3
    SCHERRER, H
    HAMMOU, B
    FLEURIAL, JP
    SCHERRER, S
    PHYSICS LETTERS A, 1988, 130 (03) : 161 - 165
  • [42] Fabrication of Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2Se multilayered thin film-based integrated cooling devices
    Xiao, Z.
    Hedgemen, K.
    Harris, M.
    DiMasi, E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04): : 679 - 683
  • [43] Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3
    Ahn, Jeong Ung
    Lee, Eunsu
    Kim, Seongbeom
    Han, Ki Hyuk
    Kim, Seong Been
    Lee, OukJae
    Yi, Gyu-Chul
    Koo, Hyun Cheol
    ELECTRONIC MATERIALS LETTERS, 2025, : 420 - 428
  • [44] Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3
    Li, A. H.
    Shahbazi, M.
    Zhou, S. H.
    Wang, G. X.
    Zhang, C.
    Jood, P.
    Peleckis, G.
    Du, Y.
    Cheng, Z. X.
    Wang, X. L.
    Kuo, Y. K.
    THIN SOLID FILMS, 2010, 518 (24) : E57 - E60
  • [45] Physical origin of inertness of Ta contacts on Bi2Te3
    Music, Denis
    Chen, Xiang
    Holzapfel, Damian M.
    Bilyalova, Hava M.
    Helvaci, Melike
    Heymann, Adrian O. D.
    Aghda, Soheil Karimi
    Maron, Tobias
    Ravensburg, Anna L.
    Saelker, Janis A.
    Schnelle, Lukas
    Woeste, Leonard A.
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (18)
  • [46] Physical origin of inertness of Ta contacts on Bi2Te3
    Music, Denis (music@mch.rwth-aachen.de), 1600, American Institute of Physics Inc. (124):
  • [47] Doping of Bi2Te3 using electron irradiation
    Rischau, C. W.
    Leridon, B.
    Fauque, B.
    Metayer, V.
    van der Beek, C. J.
    PHYSICAL REVIEW B, 2013, 88 (20):
  • [48] Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi2Te3 and Mn-doped Bi2Te3
    Chapler, B. C.
    Post, K. W.
    Richardella, A. R.
    Lee, J. S.
    Tao, J.
    Samarth, N.
    Basov, D. N.
    PHYSICAL REVIEW B, 2014, 89 (23)
  • [49] Bi2Te3 hexagonal nanoplates and thermoelectric properties of n-type Bi2Te3 nanocomposites
    Fan, X. A.
    Yang, J. Y.
    Xie, Z.
    Li, K.
    Zhu, W.
    Duan, X. K.
    Xiao, C. J.
    Zhang, Q. Q.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (19) : 5975 - 5979
  • [50] Effect of Chromium Doping on the Thermoelectric Properties of Bi2Te3: Cr x Bi2Te3 and Cr x Bi2-x Te3
    Han, Mi-Kyung
    Ryu, Hyein
    Kim, Sung-Jin
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (09) : 2758 - 2763
12345