Physical vapor transport of Bi2Te3 using elemental Bi and Te sources

被引：0

作者：

Concepcion, O. ^{[1
]}

Vazquez, O. ^{[1
]}

de Melo, O. ^{[1
]}

Escobosa, A. ^{[2
]}

机构：

[1] Univ La Habana, Fac Fis, Havana, Cuba

[2] CINVESTAV, SEES Ingn Elect, Mexico City, DF, Mexico

来源：

2015 IEEE INTERNATIONAL AUTUMN MEETING ON POWER, ELECTRONICS AND COMPUTING (ROPEC) | 2015年

关键词：

Topological insulator; Physical vapor transport; Bismuth telluride; TELLURIDE THIN-FILMS; TOPOLOGICAL INSULATOR; DEPOSITION; SURFACE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel procedure to obtain micro and nanocrystals of Bi2Te3 is presented. The crystals are obtained by physical vapor transport using Bi and Te as sources. They were characterized by x-ray diffraction and scanning electron microscopy. Different kinds of structures as faceted crystals, strips and tubes were found at different temperatures. X-rays diffraction indicated that crystals were oriented with the (0 0 1) planes parallel to the surface.

引用

页数：3

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