A Total Ionizing Dataset Dose Dataset for Vertical NPN Bipolar Transistors

被引：0

作者：

Adams, Dennis A. ^{[1
]}

Barnes, Herbert A. ^{[1
]}

Goldstein, Norman P. ^{[1
]}

Harms, David C. ^{[1
]}

Horner, Jeremiah J. ^{[1
]}

Sherman, Cory E. ^{[1
]}

Stodart, Craig ^{[2
]}

机构：

[1] Northrop Grumman Corp, Baltimore, MD 21240 USA

[2] Int Rectifier Corp, El Segundo, CA USA

来源：

2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2014年

关键词：

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.

引用

页数：3

共 50 条

[31] Characteristics of indium implanted base npn bipolar transistors
Tian, H
Hayden, J
Taylor, B
Wu, LY
Zeng, L
PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, : 156 - 159
[32] The total dose response of NPN transistors with different package types to various irradiation conditions
Dowling, S
1996 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 1996, : 44 - 48
[33] SCALING IN NPN AND PNP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
SHEPARD, K
SCHUMACHER, H
ELECTRONICS LETTERS, 1988, 24 (02) : 111 - 112
[34] Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors
Li, Pei
He, Chaohui
Guo, Hongxia
Li, Yonghong
Wei, Jianan
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (05) : 1051 - 1056
[35] Total ionizing dose effects on nanosheet and nanowire field effect transistors
Han, Jin-Woo
Kim, Jungsik
Meyyappan, M.
MICROELECTRONICS RELIABILITY, 2021, 121
[36] Total ionizing dose radiation effects of RF PDSOI LDMOS transistors
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Pan Tao Ti Hsueh Pao, 2008, 11 (2158-2163):
[37] New analyses of the NIMH bipolar dataset
Nurnberger, JI
Foroud, T
Flury, L
Meyer, ET
Edenberg, H
DePaulo, JR
Stine, OC
Blehar, MC
Detera-Wadleigh, S
Gershon, ES
Reich, T
Goate, A
MOLECULAR PSYCHIATRY, 1999, 4 : S19 - S19
[38] Impact of Total Ionizing Dose on the Electromagnetic Susceptibility of a Single Bipolar Transistor
Doridant, A.
Jarrix, S.
Raoult, J.
Blain, A.
Chatry, N.
Calvel, P.
Hoffmann, P.
Dusseau, L.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 860 - 865
[39] Total ionizing dose effects and bias dependence in selected bipolar devices
Chavez, R. M.
Rax, B. G.
Johnston, A. H.
NSREC: 2006 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2006, : 50 - +
[40] Numerical simulation of the vertical complementary NPN bipolar transistor
Kalinin, S. V.
Hrapov, M. O.
2014 12TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONICS INSTRUMENT ENGINEERING (APEIE), 2014, : 68 - 70

← 1 2 3 4 5 →