A Total Ionizing Dataset Dose Dataset for Vertical NPN Bipolar Transistors

被引：0
|
作者：
Adams, Dennis A. [1 ]
Barnes, Herbert A. [1 ]
Goldstein, Norman P. [1 ]
Harms, David C. [1 ]
Horner, Jeremiah J. [1 ]
Sherman, Cory E. [1 ]
Stodart, Craig [2 ]
机构：
[1] Northrop Grumman Corp, Baltimore, MD 21240 USA
[2] Int Rectifier Corp, El Segundo, CA USA
来源：
2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2014年
关键词：
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.
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