Electronic structure of α-sexithiophene ultrathin films grown on Si(111)-√3x√3-Ag

被引：8

作者：

Ohno, Shinya ^{[1
]}

Tanaka, Hiroya ^{[1
]}

Tanaka, Kazuma ^{[1
]}

Takahashi, Kazutoshi ^{[2
]}

Tanaka, Masatoshi ^{[1
]}

机构：

[1] Yokohama Natl Univ, Fac Engn, Hodogaya Ku, 79-5 Tokiwadai, Yokohama, Kanagawa 2408501, Japan

[2] Saga Univ, Synchrotron Light Applicat Ctr, Honjo 1, Saga 8408502, Japan

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2018年 / 20卷 / 02期

关键词：

X ROOT-3-AG SURFACE; ROOT-3)R30-DEGREES-AG SURFACE; MOLECULAR-ORIENTATION; SILICON DIOXIDE; PENTACENE; SI(111); PHOTOEMISSION; AG; OLIGOTHIOPHENES; ADSORPTION;

D O I：

10.1039/c7cp05222g

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the electronic states of alpha-sexithiophene (alpha-6T) on Si(111)-root 3 x root 3-Ag by means of angle-resolved photoelectron spectroscopy using synchrotron radiation. The characteristic features of n states are observed in the valence region. The increase in the population of the S (t)band, assigned to the surface state of Si(111)-root 3 x root 3-Ag, upon deposition of alpha-6T was measured and the change in the electron density was evaluated. The band diagram was constructed based on the measurement of the HOMO level and work function. The work function was found to change with the alpha-6T thickness in a characteristic manner. We constructed a model of the electron transfer at each growth stage based on the core levels of the substrate (Si 2p, Ag 3d) and alpha-6T molecule (C 1s, S 2p), as well as the valence state and work function change.

引用

页码：1114 / 1126

页数：13

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