Surface-sensitive x-ray standing-wave study of Si(111)root 3x root 3-Ag

被引：5
|
作者：
Woicik, JC
Kendelewicz, T
Yoshikawa, SA
Miyano, KE
Herman, GS
Cowan, PL
Pianetta, P
Spicer, WE
机构：
[1] STANFORD UNIV, STANFORD, CA 94305 USA
[2] CUNY BROOKLYN COLL, BROOKLYN, NY 11210 USA
[3] PACIFIC NW LAB, RICHLAND, WA 99352 USA
[4] ARGONNE NATL LAB, CHICAGO, IL 60439 USA
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.53.15425
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By combining the surface sensitivity of low-energy elastic photoelectrons with the position sensitivity of the x-ray standing-wave technique, we have determined both the Ag and Si atomic heights at the Si(lll)root 3x root 3-Ag interface. Our data give evidence that the Si(lll)root 3x root 3-Ag surface consists of a missing Si top-layer reconstruction, with Ag adatoms terminating the structure. The perpendicular height of the Ag layer and the first Si layer supports the honeycomb-chained-trimer model proposed for this interface.
引用
收藏
页码：15425 / 15428
页数：4
相关论文
共 50 条
  • [1] Surface-sensitive x-ray standing-wave study of Si(111) QQ 3X QQ 3-Ag
    Phys Rev B, 23 (15 425):
  • [2] Multiple scattering study of X-ray photoelectron diffraction from Si(111)-root 3x root 3-Ag surface
    Chen, X
    Abukawa, T
    Tani, J
    Kono, S
    SURFACE SCIENCE, 1996, 357 (1-3) : 560 - 564
  • [3] Electron standing waves on the Si(111)-√3x√3-Ag surface
    Sato, N
    Takeda, S
    Nagao, T
    Hasegawa, S
    PHYSICAL REVIEW B, 1999, 59 (03): : 2035 - 2039
  • [4] Multiple scattering effects on X-ray photoelectron diffraction from Si(111) root 3x root 3-Ag and -Sb surfaces
    Chen, X
    Abukawa, T
    Kono, S
    SURFACE SCIENCE, 1996, 356 (1-3) : 28 - 38
  • [5] STUDY ON THE Si(111) ROOT 3MUL ROOT 3-Ag SURFACE STRUCTURE BY X-RAY DIFFRACTION.
    Univ of Tokyo, Roppongi, Jpn, Univ of Tokyo, Roppongi, Jpn
    Jpn J Appl Phys Part 2, 1988, 5 (753-755):
  • [6] TOF-ICISS observation of Pb growth on the Si(111)-root 3x root 3-Ag surface
    Ryu, JT
    Kui, K
    Tanaka, Y
    Katayama, M
    Oura, K
    Katayama, I
    APPLIED SURFACE SCIENCE, 1997, 113 : 393 - 397
  • [7] Silver growth on Si(111)root 3X root 3-Ag surfaces at low temperature
    Lijadi, M
    Iwashige, H
    Ichimiya, A
    SURFACE SCIENCE, 1996, 357 (1-3) : 51 - 54
  • [8] Structures and electrical conductance of the Si(111)-root 3x root 3-Ag surface with additional Ag adsorption at low temperatures
    Tong, X
    Hasegawa, S
    Ino, S
    PHYSICAL REVIEW B, 1997, 55 (03): : 1310 - 1313
  • [9] ADATOM LOCATION ON THE SI(111) 7X7 AND SI(111) ROOT-3X-ROOT-3-IN SURFACES BY THE X-RAY STANDING-WAVE AND PHOTOEMISSION TECHNIQUES
    WOICIK, JC
    KENDELEWICZ, T
    HERRERAGOMEZ, A
    ANDREWS, AB
    KIM, BS
    COWAN, PL
    MIYANO, KE
    BOULDIN, CE
    KARLIN, BA
    HERMAN, GS
    ERSKINE, JL
    PIANETTA, P
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 2359 - 2363
  • [10] Structure determination of Si(111)root 3X root 3-Sb surface by X-ray diffraction
    Nakatani, S
    Kuwahara, Y
    Takahashi, T
    Aono, M
    SURFACE SCIENCE, 1996, 357 (1-3) : 65 - 68
12345