Surface-sensitive x-ray standing-wave study of Si(111)root 3x root 3-Ag

被引：5
|
作者：
Woicik, JC
Kendelewicz, T
Yoshikawa, SA
Miyano, KE
Herman, GS
Cowan, PL
Pianetta, P
Spicer, WE
机构：
[1] STANFORD UNIV, STANFORD, CA 94305 USA
[2] CUNY BROOKLYN COLL, BROOKLYN, NY 11210 USA
[3] PACIFIC NW LAB, RICHLAND, WA 99352 USA
[4] ARGONNE NATL LAB, CHICAGO, IL 60439 USA
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.53.15425
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By combining the surface sensitivity of low-energy elastic photoelectrons with the position sensitivity of the x-ray standing-wave technique, we have determined both the Ag and Si atomic heights at the Si(lll)root 3x root 3-Ag interface. Our data give evidence that the Si(lll)root 3x root 3-Ag surface consists of a missing Si top-layer reconstruction, with Ag adatoms terminating the structure. The perpendicular height of the Ag layer and the first Si layer supports the honeycomb-chained-trimer model proposed for this interface.
引用
收藏
页码：15425 / 15428
页数：4
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