Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and biosensing applications

被引：1
|
作者：
Marulanda, Jose M. [1 ]
Srivastava, Ashok [1 ]
Sharma, Ashwani K. [2 ]
机构：
[1] Louisiana State Univ, Dept Elect & Comp Engn, Baton Rouge, LA 70803 USA
[2] AFRL VSSE, Electron Fdn Grp, Kirtland AFB, NM 87117 USA
来源：
NANOSENSORS AND MICROSENSORS FOR BIO-SYSTEMS 2008 | 2008年 / 6931卷
关键词：
carbon nanotubes; CNT-FETs; analytical models; bio-sensors; chemical sensors;
D O I：
10.1117/12.775181
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Current transport in carbon nanotube field effect transistors (CNT-FETs) has been modeled from charge distributions and the potential inside the carbon nanotube. Analytical equations describing I-V characteristics of the CNT-FETs have been obtained from the combination of diffusion and drift mechanisms in the channel region for normal and subthreshold operations. It is shown that the electronic transport in semiconducting single-walled carbon nanotubes and field effect transistors can provide better understanding of their bio- and chemical sensing for the detection of traces of agents at molecular levels.
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收藏
页数：12
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