A simple Drain Current Model for Carbon Nanotube Field Effect Transistors

被引：0
|
作者：
Marki, Rebiha
Azizi, Cherifa
Zaabat, Mourad
机构：
来源：
2013 SAUDI INTERNATIONAL ELECTRONICS, COMMUNICATIONS AND PHOTONICS CONFERENCE (SIECPC) | 2013年
关键词：
CNTFET; nanotube diameter; Static properties;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different parameters.
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页数：4
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