Structural and electrical properties of Sb2O3 thin films

被引：0
|
作者：
Tigau, Nicolae [1 ]
机构：
[1] Dunarea de Jos Univ Galati, Fac Sci, 47 Domneasca St, Galati 800201, Romania
来源：
ROMANIAN JOURNAL OF PHYSICS | 2008年 / 53卷 / 1-2期
关键词：
antimony trioxide; thin films; electrical conductivity; thermal activation energy;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The thin films Sb2O3 are deposited under vacuum on glass substrates by thermal evaporation technique. The structural characteristics of these films were studied by combined X-ray diffraction and planar view scanning electron microscopy. Electrical properties of vacuum evaporated Sb2O3 thin films have been studied. The electrical conductivity was carried out at different temperatures in the range 289-443 K. The electrical conduction was discussed in terms of known transport mechanisms. The thermal activation energy of the films with thickness of 0.34 mu m is determined by the temperature dependence of electrical conductivity.
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页码：203 / +
页数：10
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