Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers

被引：0

作者：

Susaki, W ^{[1
]}

Ukawa, S ^{[1
]}

机构：

[1] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan

来源：

2005 International Conference on Indium Phosphide and Related Materials | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Spontaneous carrier recombination lifetime increases with Indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones.

引用

页码：666 / 669

页数：4

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