Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers

被引：0
|
作者：
Susaki, W [1 ]
Ukawa, S [1 ]
机构：
[1] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan
来源：
2005 International Conference on Indium Phosphide and Related Materials | 2005年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Spontaneous carrier recombination lifetime increases with Indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones.
引用
收藏
页码：666 / 669
页数：4
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