An Accurate and Stable Finite Element Method for Self-Heating Effects Simulation of Semiconductor Devices

被引：0
|
作者：
Yu, Da-Miao [1 ]
Pan, Xiao-Min [1 ]
Sheng, Xin-Qing [1 ]
机构：
[1] Beijing Inst Technol, Ctr Electromagnet Simulat, Beijing, Peoples R China
来源：
PROCEEDINGS OF THE 2019 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA) | 2019年
关键词：
self-heating effect; semiconductor devices; CVFEM-SG; DIFFUSION; EQUATIONS;
D O I：
10.1109/iceaa.2019.8879296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.
引用
收藏
页码：1107 / 1110
页数：4
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