Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors

被引：20

作者：

Austin, Dustin Z. ^{[1
]}

Allman, Derryl ^{[2
]}

Price, David ^{[2
]}

Hose, Sallie ^{[2
]}

Conley, John F., Jr. ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

[2] ON Semicond, Technol Dev, Gresham, OR 97030 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Al2O3/SiO2; metal-insulator-metal capacitors; MIMCAPs; MIIM; plasma enhanced atomic layer deposition; PEALD; quadratic voltage coefficient of capacitance; alpha VCC; INSULATOR-METAL CAPACITORS; RELIABILITY; IMPROVEMENT;

D O I：

10.1109/LED.2015.2412685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 degrees C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance (alpha VCC) of Al2O3 and the negative alpha VCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors 2020 projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/mu m(2), a leakage current density of 6.8 nA/cm(2) at 1 V, and a minimized alpha VCC of -20 ppm/V-2.

引用

页码：496 / 498

页数：3

共 50 条

[31] Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
Canto, Barbara
Otto, Martin
Powell, Michael J.
Babenko, Vitaliy
O'Mahony, Aileen
Knoops, Harm C. M.
Sundaram, Ravi S.
Hofmann, Stephan
Lemme, Max C.
Neumaier, Daniel
ADVANCED MATERIALS TECHNOLOGIES, 2021, 6 (11)
[32] Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors
Nakibinge Tawfiq Kimbugwe
Ercan Yilmaz
Journal of Materials Science: Materials in Electronics, 2020, 31 : 12372 - 12381
[33] Atomic layer deposition of Al2O3 process emissions
Ma, Lulu
Pan, Dongqing
Xie, Yuanyuan
Yuan, Chris
RSC ADVANCES, 2015, 5 (17) : 12824 - 12829
[34] Atomic layer deposition of alumina on γ-Al2O3 nanofibres
Jogiaas, Taivo
Arroval, Tonis
Kollo, Lauri
Kozlova, Jekaterina
Kaeaembre, Tanel
Maendar, Hugo
Tamm, Aile
Hussainova, Irina
Kukli, Kaupo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (02): : 403 - 408
[35] Interstitial oxygen incorporation into silicon substrate during plasma enhanced atomic layer deposition of Al2O3
Kim, H
Jeon, WS
Jung, SH
Ahn, BT
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (10) : G294 - G296
[36] Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition
Singh, Prashant
Jha, Rajesh Kumar
Singh, Rajat Kumar
Singh, Babu Ram
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (04):
[37] Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
Ali, A.
Madan, H. S.
Kirk, A. P.
Zhao, D. A.
Mourey, D. A.
Hudait, M. K.
Wallace, R. M.
Jackson, T. N.
Bennett, B. R.
Boos, J. B.
Datta, S.
APPLIED PHYSICS LETTERS, 2010, 97 (14)
[38] Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
Hur, M.
Kim, D. J.
Kang, W. S.
Lee, J. O.
Song, Y. -H.
Kim, S. J.
Kim, I. D.
PLASMA CHEMISTRY AND PLASMA PROCESSING, 2016, 36 (02) : 679 - 691
[39] Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
Hur, M.
Lee, J. Y.
Kang, W. S.
Lee, J. O.
Song, Y. -H.
Kim, S. J.
Kim, I. D.
THIN SOLID FILMS, 2016, 619 : 342 - 346
[40] Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
M. Hur
D. J. Kim
W. S. Kang
J. O. Lee
Y.-H. Song
S. J. Kim
I. D. Kim
Plasma Chemistry and Plasma Processing, 2016, 36 : 679 - 691

← 1 2 3 4 5 →