Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors

被引：20

作者：

Austin, Dustin Z. ^{[1
]}

Allman, Derryl ^{[2
]}

Price, David ^{[2
]}

Hose, Sallie ^{[2
]}

Conley, John F., Jr. ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

[2] ON Semicond, Technol Dev, Gresham, OR 97030 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Al2O3/SiO2; metal-insulator-metal capacitors; MIMCAPs; MIIM; plasma enhanced atomic layer deposition; PEALD; quadratic voltage coefficient of capacitance; alpha VCC; INSULATOR-METAL CAPACITORS; RELIABILITY; IMPROVEMENT;

D O I：

10.1109/LED.2015.2412685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 degrees C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance (alpha VCC) of Al2O3 and the negative alpha VCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors 2020 projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/mu m(2), a leakage current density of 6.8 nA/cm(2) at 1 V, and a minimized alpha VCC of -20 ppm/V-2.

引用

页码：496 / 498

页数：3

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