Experimental Study of Charge Trapping Type FinFET Flash Memory

被引：0
|
作者：
Liu, Yongxun [1 ]
Nabatame, Toshihide [2 ]
Matsukawa, Takashi [1 ]
Endo, Kazuhiko [1 ]
O'uchi, Sinichi [1 ]
Tsukada, Junichi [1 ]
Yamauchi, Hiromi [1 ]
Ishikawa, Yuki [1 ]
Mizubayashi, Wataru [1 ]
Morita, Yukinori [1 ]
Migita, Shinji [1 ]
Ota, Hiroyuki [1 ]
Chikyow, Toyohiro [2 ]
Masahara, Meishoku [1 ]
机构：
[1] AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2014年
关键词：
FinFET; Flash memory; Charge trapping; 3D fin-channel; High-k; Blocking layer; Gate work function;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
    Su, Nai-Chao
    Wang, Shui Jinn
    Chin, Albert
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) : 201 - 203
  • [32] A novel SONOS-type flash device with stacked charge trapping layer
    Ye, Zong-Hao
    Chang-Liao, Kuei-Shu
    Liu, Te-Chiang
    Wang, Tien-Ko
    Tzeng, Pei-Jer
    Lin, Cha-Hsin
    Tsai, Min-Jinn
    MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1863 - 1865
  • [33] Optimized cell structure for FinFET array flash memory
    Cho, ES
    Kim, TY
    Lee, CH
    Lee, C
    Yoon, JM
    Cho, HJ
    Kang, HS
    Ahn, YJ
    Park, DG
    Kim, K
    ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 289 - 292
  • [34] Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash Memory
    Lee, Juwon
    Seo, Junho
    Nam, Jeonghun
    Kim, YongLae
    Song, Ki-Whan
    Song, Jai Hyuk
    Choi, Woo Young
    2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
  • [35] Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications
    You, Hee-Wook
    Cho, Won-Ju
    APPLIED PHYSICS LETTERS, 2010, 96 (09)
  • [36] Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash Memory
    Lee, Juwon
    Seo, Junho
    Nam, Jeonghun
    Kim, YongLae
    Song, Ki-Whan
    Song, Jai Hyuk
    Choi, Woo Young
    2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
  • [37] Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention
    Tsai, C. Y.
    Lee, T. H.
    Chin, Albert
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) : 381 - 383
  • [38] Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
    Liu, Li-Jung
    Chang-Liao, Kuei-Shu
    Wu, Tai-Yu
    Wang, Tien-Ko
    Tsai, Wen-Fa
    Ai, Chi-Fong
    MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1852 - 1855
  • [39] Charge Trapping NanoElectronic Memory
    Lorenzi, P.
    Rao, R.
    Palma, F.
    Irrera, F.
    Ghidini, G.
    2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 214 - 217
  • [40] Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell
    Shin, Eui Joong
    Lee, Gyusoup
    Kim, Seongho
    Chu, Jun Hong
    Cho, Byung Jin
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (07) : 1108 - 1111
12345