Experimental Study of Charge Trapping Type FinFET Flash Memory

被引：0

作者：

Liu, Yongxun ^{[1
]}

Nabatame, Toshihide ^{[2
]}

Matsukawa, Takashi ^{[1
]}

Endo, Kazuhiko ^{[1
]}

O'uchi, Sinichi ^{[1
]}

Tsukada, Junichi ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

Ishikawa, Yuki ^{[1
]}

Mizubayashi, Wataru ^{[1
]}

Morita, Yukinori ^{[1
]}

Migita, Shinji ^{[1
]}

Ota, Hiroyuki ^{[1
]}

Chikyow, Toyohiro ^{[2
]}

Masahara, Meishoku ^{[1
]}

机构：

[1] AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2014年

关键词：

FinFET; Flash memory; Charge trapping; 3D fin-channel; High-k; Blocking layer; Gate work function;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.

引用

页数：4

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