Growth, structure and spectroscopic characterization of the Mn-doped GaN thin films

被引：0
|
作者：
Bondar, V [1 ]
Kukharsky, I [1 ]
Padlyak, B [1 ]
Davydov, V [1 ]
Simkiv, B [1 ]
Grinberg, M [1 ]
Kuklinski, B [1 ]
机构：
[1] Ivan Franko Natl Univ Lviv, Dept Phys, UA-79005 Lviv, Ukraine
来源：
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷
关键词：
GaN-Mn; thin film; rf-magnetron sputtering; cathodoluminescence; photoluminescence; ESR;
D O I：
10.1117/12.425402
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. The dependence of GaN-Mn thin films deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated. The influence of technological conditions of deposition on crystal structure parameters of gallium nitride thin films were investigated. Luminescence and electron spin resonance (ESR) spectra of GaN-Mn thin films have been studied.
引用
收藏
页码：50 / 54
页数：5
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