Surface Modification of Oxide Nanowires by Nitrogen Plasma

被引：10

作者：

Lim, Taekyung ^{[1
]}

Lee, Sumi ^{[1
]}

Suh, Misook ^{[1
]}

Ju, Sanghyun ^{[1
]}

机构：

[1] Kyonggi Univ, Dept Phys, Suwon 443760, Gyeonggi Do, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

ELECTRICAL-PROPERTIES; FIELD-EMISSION; FABRICATION; TRANSISTORS;

D O I：

10.1149/1.3562274

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amount of oxygen vacancies on the surface of SnO2 nanowires was controlled by N-2 plasma. Nitrogen ions in N-2 plasma were substituted for oxygen vacancies (V-o) on the nanowire surface, reducing the amount of oxygen vacancies. Photoluminescence spectra showed that the V-o-related peak around 600 nm decreased dramatically after N-2 plasma and increased again after ultravioleto-zone (UVO) treatment. The threshold voltage (V-th) of the SnO2 nanowire transistors exhibited a +1.8 V positive shift after N-2 plasma, and the V-th of the N-2 plasma-treated nanowire transistors shifted toward the negative direction (-0.76 V) again after UVO. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562274] All rights reserved.

引用

页码：H218 / H221

页数：4

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