Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

被引:14
|
作者
Tsujino, Soichiro [1 ]
Helfenstein, Patrick [1 ]
Kirk, Eugenie [1 ]
Vogel, Thomas [1 ]
Escher, Conrad [2 ]
Fink, Hans-Werner [2 ]
机构
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
Collimation; double-gate field-emitter arrays (FEAs); electron emission; high brilliance; metallic emitters; molding;
D O I
10.1109/LED.2010.2052013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of similar to 1 mA from 40 x 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications.
引用
收藏
页码:1059 / 1061
页数:3
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