Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

被引：14

作者：

Tsujino, Soichiro ^{[1
]}

Helfenstein, Patrick ^{[1
]}

Kirk, Eugenie ^{[1
]}

Vogel, Thomas ^{[1
]}

Escher, Conrad ^{[2
]}

Fink, Hans-Werner ^{[2
]}

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

基金：

瑞士国家科学基金会;

关键词：

Collimation; double-gate field-emitter arrays (FEAs); electron emission; high brilliance; metallic emitters; molding;

D O I：

10.1109/LED.2010.2052013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of similar to 1 mA from 40 x 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications.

引用

页码：1059 / 1061

页数：3

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