Using of the quantum well Ge/Ge1-x,Six heterostructures for mode locking in the far infrared p-Ge laser

被引：0
|
作者：
Zhukavin, RK [1 ]
Muravjov, AV
Pavlov, SG
Sitdikov, AK
Shastin, VN
Kuznetsov, OA
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] Nizhnii Novgorod State Univ, Tech Phys Res Inst, Nizhnii Novgorod, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 1999年 / 63卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：364 / 368
页数：5
相关论文
共 50 条
  • [31] SINGLE-MODE OPERATION OF THE P-GE FIR LASER
    UNTERRAINER, K
    NITHISOONTORN, M
    HELM, M
    GORNIK, E
    HALLER, EE
    INFRARED PHYSICS, 1989, 29 (2-4): : 357 - 360
  • [32] Piezo-controlled intracavity wavelength selector for the far-infrared p-Ge laser
    Nelson, EW
    Muravjov, AV
    Pavlov, SG
    Shastin, VN
    Peale, RE
    INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (02) : 107 - 110
  • [33] ESTABLISHMENT OF A DYNAMIC-MODEL FOR THE P-GE FAR IR LASER
    COLEMAN, PD
    WIERER, JJ
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1995, 16 (01): : 3 - 32
  • [34] Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors
    Du Bosq, TW
    Peale, RE
    Nelson, EW
    Muravjov, AV
    Walters, DA
    Subramanian, G
    Sundaram, KB
    Fredricksen, CJ
    CHEMICAL AND BIOLOGICAL SENSING IV, 2003, 5085 : 119 - 125
  • [35] Far-infrared spectroscopy of shallow acceptors in strained Ge/GeSi quantum well heterostructures
    Aleshkin, VY
    Gavrilenko, VI
    Erofeeva, IV
    Korotkov, AL
    Kozlov, DV
    Kuznetsov, OA
    Moldavskaya, MD
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 210 (02): : 649 - 653
  • [36] Noise reduction by bias cooling in gated Si/Six Ge1-x quantum dots
    Ferrero, Julian
    Koch, Thomas
    Vogel, Sonja
    Schroller, Daniel
    Adam, Viktor
    Xue, Ran
    Seidler, Inga
    Schreiber, Lars R.
    Bluhm, Hendrik
    Wernsdorfer, Wolfgang
    APPLIED PHYSICS LETTERS, 2024, 124 (20)
  • [37] Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon
    Du Bosq, TW
    Peale, RE
    Nelson, EW
    Muravjov, AV
    Fredricksen, CJ
    SOLID STATE LASERS XII, 2003, 4968 : 18 - 23
  • [38] ELECTRIC DOMAINS AND FAR-INFRARED EMISSION IN AN UNIAXIALLY DEFORMED P-GE
    ALTUKHOV, IV
    KAGAN, MS
    KOROLEV, KA
    SINIS, VP
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1993, 103 (05): : 1829 - 1839
  • [39] Gain of the mode locked p-Ge laser in the low field region
    Hovenier, JN
    Klaassen, TO
    Wenckebach, WT
    Muravjov, AV
    Pavlov, SG
    Shastin, VN
    APPLIED PHYSICS LETTERS, 1998, 72 (10) : 1140 - 1142
  • [40] Actively mode-locked p-Ge laser in Faraday configuration
    Muravjov, AV
    Withers, SH
    Strijbos, RC
    Pavlov, SG
    Shastin, VN
    Peale, RE
    APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2882 - 2884
12345