Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

被引：1

作者：

Du Bosq, TW ^{[1
]}

Peale, RE ^{[1
]}

Nelson, EW ^{[1
]}

Muravjov, AV ^{[1
]}

Fredricksen, CJ ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

SOLID STATE LASERS XII | 2003年 / 4968卷

关键词：

far-infrared; terahertz; sub-millimeter; p-germanium; semiconductor laser; tunable laser;

D O I：

10.1117/12.478952

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is similar to0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.

引用

页码：18 / 23

页数：6

共 34 条

[1] Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors
Du Bosq, TW
Peale, RE
Nelson, EW
Muravjov, AV
Walters, DA
Subramanian, G
Sundaram, KB
Fredricksen, CJ
CHEMICAL AND BIOLOGICAL SENSING IV, 2003, 5085 : 119 - 125
[2] Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings
Du Bosq, TW
Peale, RE
Nelson, EW
Muravjov, AV
Walters, DA
Subramanian, G
Sundaram, KB
Fredricksen, CJ
OPTICS AND LASER TECHNOLOGY, 2005, 37 (02): : 87 - 91
[3] Dielectric selective mirror for intracavity wavelength selection in far-infrared p-Ge lasers
Du Bosq, TW
Peale, RE
Nelson, EW
Muravjov, AV
Fredricksen, CJ
Tache, N
Tanner, DB
JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) : 5474 - 5478
[4] Dielectric selective mirror for intracavity wavelength selection in far-infrared p-Ge lasers
Du Bosq, T.W. (rep@physics.ucf.edu), 1600, American Institute of Physics Inc. (94):
[5] Piezo-controlled intracavity wavelength selector for the far-infrared p-Ge laser
Nelson, EW
Muravjov, AV
Pavlov, SG
Shastin, VN
Peale, RE
INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (02) : 107 - 110
[6] High reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser
Du Bosq, TW
Muravjov, AV
Peale, RE
TERAHERTZ FOR MILITARY AND SECURITY APPLICATIONS II, 2004, 5411 : 167 - 173
[7] FAR-INFRARED LASER OSCILLATION IN P-GE
KOMIYAMA, S
KURODA, S
SOLID STATE COMMUNICATIONS, 1986, 59 (03) : 167 - 172
[8] Multilayer silicon cavity mirrors for the far-infrared p-Ge laser
Du Bosq, TW
Muravjov, AV
Peale, RE
Fredricksen, CJ
APPLIED OPTICS, 2005, 44 (33) : 7191 - 7195
[9] Miniature stressed p-Ge far-infrared laser
Communications Research Laboratory, Japan
J Commun Res Lab, 3 (283-285):
[10] SATURATION SPECTROSCOPY OF THE P-GE FAR-INFRARED LASER
KEILMANN, F
TILL, R
OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 : S231 - S246

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