Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

被引：1

作者：

Du Bosq, TW ^{[1
]}

Peale, RE ^{[1
]}

Nelson, EW ^{[1
]}

Muravjov, AV ^{[1
]}

Fredricksen, CJ ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

SOLID STATE LASERS XII | 2003年 / 4968卷

关键词：

far-infrared; terahertz; sub-millimeter; p-germanium; semiconductor laser; tunable laser;

D O I：

10.1117/12.478952

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is similar to0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.

引用

页码：18 / 23

页数：6

共 34 条

[21] NONLINEAR FAR-INFRARED RESPONSE OF PASSIVE AND ACTIVE HOLE SYSTEMS IN P-GE
KEILMANN, F
TILL, R
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B633 - B635
[22] High-repetition-rate far infrared p-Ge laser
Park, Kijun
Peale, Robert F.
Weidner, Henry
Kim, Jin J.
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1996,
[23] Uniform acceptor distribution in neutron transmutation doped far-infrared p-Ge lasers
Nelson, EW
Dolguikh, MV
Flitsiyan, ES
Muravjov, AV
Peale, RE
Kleckley, SH
Vernetson, WG
Tsipin, VZ
LASER SYSTEMS TECHNOLOGY, 2003, 5087 : 133 - 140
[24] GUNN DOMAINS AND STIMULATED FAR-INFRARED RADIATION IN P-GE UNDER UNIAXIAL DEFORMATION
ALTUKHOV, IV
KAGAN, MS
KOROLEV, KA
SINIS, VP
PHYSICS LETTERS A, 1993, 176 (1-2) : 133 - 136
[25] Pulse separation control for mode-locked far-infrared p-Ge lasers
Muravjov, AV
Strijbos, RC
Fredricksen, CJ
Withers, SH
Trimble, W
Pavlov, SG
Shastin, VN
Peale, RE
APPLIED PHYSICS LETTERS, 1999, 74 (02) : 167 - 169
[26] Using of the quantum well Ge/Ge1-x,Six heterostructures for mode locking in the far infrared p-Ge laser
Zhukavin, RK
Muravjov, AV
Pavlov, SG
Sitdikov, AK
Shastin, VN
Kuznetsov, OA
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (02): : 364 - 368
[27] FAR-INFRARED EMISSION FROM POPULATION-INVERTED HOT-CARRIER SYSTEM IN P-GE
KOMIYAMA, S
PHYSICAL REVIEW LETTERS, 1982, 48 (04) : 271 - 274
[28] Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers
Strijbos, RC
Muravjov, AV
Blok, JH
Hovenier, JN
Lok, JGS
Pavlov, SG
Schouten, RN
Shastin, VN
Wenckebach, WT
15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 61 - 62
[29] FAR-INFRARED LASER OSCILLATION IN PARA-GE USING EXTERNAL REFLECTORS
KOMIYAMA, S
KURODA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (01): : L71 - L73
[30] DETECTION OF LIGHT-HOLE ACCUMULATION IN P-GE IN CROSSED ELECTRIC AND MAGNETIC-FIELDS THROUGH FAR-INFRARED MEASUREMENTS
GAVRILENKO, VI
MURZIN, VN
STOKLITSKII, SA
CHEBOTAREV, AP
JETP LETTERS, 1982, 35 (02) : 97 - 101

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