Effect of oxygen on the threshold voltage of a-IGZO TFT

被引：48

作者：

Chong, Eugene ^{[1
]}

Chun, Yoon Soo ^{[2
]}

Kim, Seung Han ^{[2
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Univ Sci & Technol, Taejon 305333, South Korea

[2] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

来源：

JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | 2011年 / 6卷 / 04期

关键词：

a-IGZO; Oxide TFT; O-2 partial pressure; Threshold voltage; ELECTRON-TRANSPORT PROPERTIES; ZINC-OXIDE; HYDROGEN; TEMPERATURE;

D O I：

10.5370/JEET.2011.6.4.539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying O-2 ratios. The device performance is significantly affected by adjusting the O-2 ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

引用

页码：539 / 542

页数：4

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