Effect of oxygen on the threshold voltage of a-IGZO TFT

被引：48
|
作者：
Chong, Eugene [1 ]
Chun, Yoon Soo [2 ]
Kim, Seung Han [2 ]
Lee, Sang Yeol [1 ]
机构：
[1] Univ Sci & Technol, Taejon 305333, South Korea
[2] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea
来源：
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | 2011年 / 6卷 / 04期
关键词：
a-IGZO; Oxide TFT; O-2 partial pressure; Threshold voltage; ELECTRON-TRANSPORT PROPERTIES; ZINC-OXIDE; HYDROGEN; TEMPERATURE;
D O I：
10.5370/JEET.2011.6.4.539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying O-2 ratios. The device performance is significantly affected by adjusting the O-2 ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.
引用
收藏
页码：539 / 542
页数：4
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