Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET

被引：1
|
作者：
Ananthan, Venkat [1 ]
Yang, Rongsheng [1 ]
Mouli, Chandra [1 ]
机构：
[1] Proc R&D Micron Technol, Boise, ID 83716 USA
来源：
2008 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED) | 2008年
关键词：
cylindrical MOSFET; threshold voltage; recessed gate MOSFET;
D O I：
10.1109/WMED.2008.4510655
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models.
引用
收藏
页码：9 / 11
页数：3
相关论文
共 50 条
  • [31] Measuring the threshold voltage of a MOSFET with an active attenuator
    Tsay, JH
    Liu, SI
    Wu, YP
    ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 1, 1996, : 397 - 400
  • [32] Drain Current and Noise Model of Cylindrical Surrounding Double-Gate MOSFET for RF Switch
    Srivastava, Viranjay M.
    Yadav, K. S.
    Singh, G.
    INTERNATIONAL CONFERENCE ON MODELLING OPTIMIZATION AND COMPUTING, 2012, 38 : 517 - 521
  • [33] SUB-BREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET
    CHEN, J
    CHAN, TY
    CHEN, IC
    KO, PK
    HU, C
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) : 515 - 517
  • [34] Molecular control of the drain current in a buried channel MOSFET
    Laws, GM
    Thornton, TJ
    Yang, JM
    de la Garza, L
    Kozicki, M
    Gust, D
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (01): : 83 - 89
  • [35] Quantum effects upon drain current in a biased MOSFET
    Ip, BK
    Brews, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) : 2213 - 2221
  • [36] Molecular control of the drain current in a buried channel MOSFET
    Yang, Jinman
    de la Garza, L.
    Thornton, T. J.
    Kozicki, M.
    Gust, D.
    ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY, 2002, : 318 - 321
  • [37] Drain current control in a hybrid molecular/MOSFET device
    Laws, GM
    Thornton, TJ
    Yang, JM
    de la Garza, L
    Kozicki, M
    Gust, D
    Gu, J
    Sorid, D
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 659 - 663
  • [38] A drain current model for MOSFET's with pocket implantation
    Chang, YH
    Ho, CS
    Liao, WT
    Liu, CC
    PROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING, 2001, : 42 - 45
  • [39] Modeling of Drain Current for Grooved-Gate MOSFET
    Suseno, Jatmiko Endro
    Anwar, Sohail
    Riyadi, Munawar Agus
    Ismail, Razali
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2012, 9 (10) : 1596 - 1602
  • [40] Collapse of MOSFET drain current after soft breakdown
    Cester, A
    Paccagnella, A
    Ghidini, G
    Deleonibus, S
    Guegan, G
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (01) : 63 - 72
12345