Molecular control of the drain current in a buried channel MOSFET

被引：0

作者：

Yang, Jinman ^{[1
]}

de la Garza, L. ^{[1
]}

Thornton, T. J. ^{[1
]}

Kozicki, M. ^{[1
]}

Gust, D. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY | 2002年

关键词：

SOI; electron transport; molecular electronics;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately -4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 x 10(11) cm(-2) in the positive charge density located at the surface of the MOSFET.

引用

页码：318 / 321

页数：4

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