Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system

被引：9
|
作者：
Boniardi, Mattia [1 ]
Redaelli, Andrea [1 ]
机构：
[1] Micron Semicond Italia Srl, I-20864 Agrate Brianza, MB, Italy
来源：
MICROELECTRONIC ENGINEERING | 2015年 / 137卷
关键词：
Phase Change Memory; Scaling; Material engineering; GE-SB-TE; DIAGRAM;
D O I：
10.1016/j.mee.2014.09.021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Phase Change Memory (PCM) relies on the peculiar properties of a chalcogenide material, able to be reversibly switched between two stable states, namely an amorphous phase, characterized by high electrical resistivity, and a poly-crystalline one, featuring low resistivity. The former is associated to the RESET state of the memory and the latter represents the SET state, thus enabling the storage of digital data. On one hand PCM device scaling is an important step in order to enable denser and low power applications, thanks to the shrink of dimensions and to the reduction of the operating power. On the other hand material engineering may represent a breakthrough in terms of reliability and performance enhancement, owing to the exploitation of the physical and chemical features of different phase change compounds. A smart combination of scaling and material engineering may result into wider application spectrum for PCM. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：1 / 4
页数：4
相关论文
共 50 条
  • [21] GeSbTe phase change material for blue-violet laser at high linear speed
    Ishii, N
    Kinoshita, N
    Shimidzu, N
    Tokumaru, H
    Okuda, H
    Hirotsune, A
    Anzai, Y
    Terao, M
    Maeda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (3B): : 1691 - 1692
  • [22] X-ray Stress Evaluation in Phase Change GeSbTe Material and TiW Electrodes
    Li, Minghua
    Shi, Luping
    Zhao, Rong
    Chong, Tow Chong
    Li, Yi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 0580031 - 0580032
  • [23] GeSbTe phase change material for blue-violet laser at high linear speed
    Ishii, N., 1691, Japan Society of Applied Physics (41):
  • [24] Reliability engineering enabling continued logic for memory device scaling
    O'Sullivan, B. J.
    Ritzenthaler, R.
    Litta, E. Dentoni
    Simoen, E.
    Machkaoutsan, V.
    Fazan, P.
    Ji, Y-H
    Kim, C.
    Spessot, A.
    Linten, D.
    Horiguchi, N.
    2019 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2019, : 1 - 11
  • [25] Phase change memory - Opportunities and challenges
    Rajendran, Bipin
    Lung, Hsiang-Lan
    Lam, Chung
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 92 - 95
  • [26] Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
    Jiang, Ting-Ting
    Wang, Jiang-Jing
    Lu, Lu
    Ma, Chuan-Sheng
    Zhang, Dan-Li
    Rao, Feng
    Jia, Chun-Lin
    Zhang, Wei
    APL MATERIALS, 2019, 7 (08)
  • [27] On Some Unique Specificities of Ge-Rich GeSbTe Phase-Change Material Alloys for Nonvolatile Embedded-Memory Applications
    Luong, Minh Anh
    Agati, Marta
    Ratel Ramond, Nicolas
    Grisolia, Jeremie
    Le Friec, Yannick
    Benoit, Daniel
    Claverie, Alain
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (03):
  • [28] Highly scalable phase change memory with CVD GeSbTe for sub 50 nm generation
    Lee, J. I.
    Park, H.
    Cho, S. L.
    Park, Y. L.
    Bae, B. J.
    Park, J. H.
    Park, J. S.
    An, H. G.
    Bae, J. S.
    Ahn, D. H.
    Kim, Y. T.
    Horii, H.
    Song, S. A.
    Shin, J. C.
    Park, S. O.
    Kim, H. S.
    Chung, U-In.
    Moon, J. T.
    Ryu, B. I.
    2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 102 - +
  • [29] Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films
    Park, J. H.
    Kim, S-W.
    Kim, J. H.
    Wu, Z.
    Cho, S. L.
    Ahn, D.
    Ahn, D. H.
    Lee, J. M.
    Nam, S. U.
    Ko, D-H.
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (11)
  • [30] A Thermally Robust Phase Change Memory by Engineering the Ge/N Concentration in (Ge, N)xSbyTez Phase Change Material
    Cheng, H. Y.
    Wu, J. Y.
    Cheek, R.
    Raoux, S.
    BrightSky, M.
    Garbin, D.
    Kim, S.
    Hsu, T. H.
    Zhu, Y.
    Lai, E. K.
    Joseph, E.
    Schrott, A.
    Lai, S. C.
    Ray, A.
    Lung, H. L.
    Lam, C.
    2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012,
12345