0.3-V Bulk-Driven Nanopower OTA-C Integrator in 0.18 Aμm CMOS

被引:32
|
作者
Khateb, Fabian [1 ,2 ]
Kulej, Tomasz [3 ]
Akbari, Meysam [4 ]
Steffan, Pavel [1 ]
机构
[1] Brno Univ Technol, Dept Microelect, Tech 10, Brno, Czech Republic
[2] Czech Tech Univ, Fac Biomed Engn, Nam Sitna 3105, Kladno, Czech Republic
[3] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland
[4] Shahid Beheshti Univ, Microelect Res Lab, GC, Tehran, Iran
关键词
Bulk-driven; OTA-C integrator; Low voltage; Low power; Sub-0.5-V circuits;
D O I
10.1007/s00034-018-0901-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This short paper presents the experimental results for a 0.3-V fully differential OTA-C integrator, implemented in a standard n-well 0.18 A mu m CMOS technology from TSMC with chip area 350 x 100 A mu m. The integrator consists of an adaptively biased bulk-driven linear operational transconductance amplifier (OTA) and a low-distortion common-mode feedback circuit. The integrator can operate with supply voltages ranging from 0.3 to 0.5 V. For a 0.3-V version, its cutoff frequency can be tuned from 50 to 334 Hz for a 220 pF load capacitance. For a nominal biasing current, its power consumption is 50 nW and the dynamic range is 75 dB.
引用
收藏
页码:1333 / 1341
页数:9
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