A 1-V 5 μW CMOS-opamp with bulk-driven input transistors

被引：0
|
作者：
Lasanen, K [1 ]
Räisänen-Ruotsalainen, E [1 ]
Kostamovaara, J [1 ]
机构：
[1] Univ Oulu, Dept Elect Engn, FIN-90014 Oulu, Finland
来源：
PROCEEDINGS OF THE 43RD IEEE MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I-III | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a low-power CMOS operational amplifier for biomedical instrumentation operating with a 1-V supply is described. Large input common-mode range (CMR) is achieved utilizing bulk-driven PMOS-transistors as an input differential pair of the opamp. The opamp was fabricated in a 0-35-mum n-well double-poly CMOS process with threshold voltages of 0.5 V and 0.65 V. The open-loop gain (A(0)) of the amplifier is 70 dB, the gain-bandwidth product (GBW) is 190 kHz and the phase margin (PM) is 60 degrees with a 7 pF load. The power consumption of the opamp is 5 muW.
引用
收藏
页码：1038 / 1041
页数：4
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