Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

被引：14

作者：

Nicholas, RJ ^{[1
]}

Shields, PA ^{[1
]}

Child, RA ^{[1
]}

Li, LJ ^{[1
]}

Alphandéry, E ^{[1
]}

Mason, NJ ^{[1
]}

Bumby, C ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

quantum dots; quantum well; MOVPE; InSb; InAs; GaSb;

D O I：

10.1016/j.physe.2003.08.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：204 / 210

页数：7

共 50 条

[31] Intersubband optical transitions in InAs/GaSb quantum wells
Semenikhina I.A.
Zakharova A.A.
Chao K.A.
Russian Microelectronics, 2010, 39 (01) : 63 - 72
[32] Band structure of coupled InAs/GaSb quantum wells
de-Leon, S
Shvartsman, LD
Laikhtman, B
PHYSICAL REVIEW B, 1999, 60 (03) : 1861 - 1870
[33] InSb quantum dashes heterostructures in narrow-gap InAs(Sb,P) matrix system
Moiseev, K. D.
Romanov, V. V.
Ivanov, E. V.
Dement'ev, P. A.
Sokura, L. A.
Nevedomsky, V. N.
Bert, N. A.
2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO), 2016,
[34] Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
Meyer, M.
Schmid, S.
Jabeen, F.
Bastard, G.
Hartmann, F.
Hoefling, S.
NEW JOURNAL OF PHYSICS, 2023, 25 (02):
[35] ON THE PROPERTIES OF INSB QUANTUM WELLS
VANWELZENIS, RG
RIDLEY, BK
SOLID-STATE ELECTRONICS, 1984, 27 (02) : 113 - 120
[36] Features of microstructure of InSb quantum dots on InAs substrate
Bert, N. A.
Nevedomskiy, V. N.
Sokura, L. A.
16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2015, 586
[37] Electron spin resonance in GaSb-InAs-GaSb semimetal quantum wells
S. A. Emel’yanov
Ya. V. Terent’ev
A. P. Dmitriev
B. Ya. Mel’tser
Journal of Experimental and Theoretical Physics Letters, 1998, 68 : 810 - 816
[38] Electron spin resonance in GaSb-InAs-GaSb semimetal quantum wells
Emel'yanov, SA
Terent'ev, YV
Dmitriev, AP
Mel'tser, BY
JETP LETTERS, 1998, 68 (10) : 810 - 816
[39] MISCIBILITY GAPS IN THE GAP-INP, GAP-GASB, INP-INSN AND INAS-INSB SYSTEMS
ISHIDA, K
NOMURA, T
TOKUNAGA, H
OHTANI, H
NISHIZAWA, T
JOURNAL OF THE LESS-COMMON METALS, 1989, 155 (02): : 193 - 206
[40] Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
Möck, P
Booker, GR
Alphandéry, E
Nicholas, RJ
Mason, NJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 133 - 136

← 1 2 3 4 5 →