Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

被引：14
|
作者：
Nicholas, RJ [1 ]
Shields, PA [1 ]
Child, RA [1 ]
Li, LJ [1 ]
Alphandéry, E [1 ]
Mason, NJ [1 ]
Bumby, C [1 ]
机构：
[1] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期
关键词：
quantum dots; quantum well; MOVPE; InSb; InAs; GaSb;
D O I：
10.1016/j.physe.2003.08.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：204 / 210
页数：7
相关论文
共 50 条
  • [21] Electric control of inverted gap and hybridization gap in type-II InAs/GaSb quantum wells
    Hu, Lun-Hui
    Liu, Chao-Xing
    Xu, Dong-Hui
    Zhang, Fu-Chun
    Zhou, Yi
    PHYSICAL REVIEW B, 2016, 94 (04)
  • [22] CYCLOTRON ABSORPTION IN GASB-INAS-GASB QUANTUM-WELLS
    IVANOV, YL
    KOPEV, PS
    SUCHALKIN, SD
    USTINOV, VM
    JETP LETTERS, 1991, 53 (09) : 493 - 497
  • [23] Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
    Norman, AG
    Mason, NJ
    Fisher, MJ
    Richardson, J
    Krier, A
    Walker, PJ
    Booker, GR
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 353 - 356
  • [24] Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
    A. F. Tsatsul’nikov
    N. N. Ledentsov
    M. V. Maksimov
    B. Ya. Mel’tser
    P. V. Neklyudov
    S. V. Shaposhnikov
    B. V. Volovik
    I. L. Krestnikov
    A. V. Sakharov
    N. A. Bert
    P. S. Kop’ev
    Zh. I. Alferov
    D. Bimberg
    Semiconductors, 1997, 31 : 55 - 57
  • [25] Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
    S. S. Krishtopenko
    A. V. Ikonnikov
    K. V. Maremyanin
    L. S. Bovkun
    K. E. Spirin
    A. M. Kadykov
    M. Marcinkiewicz
    S. Ruffenach
    C. Consejo
    F. Teppe
    W. Knap
    B. R. Semyagin
    M. A. Putyato
    E. A. Emelyanov
    V. V. Preobrazhenskii
    V. I. Gavrilenko
    Semiconductors, 2017, 51 : 38 - 42
  • [26] Topological band structure in InAs/GaSb/InAs triple quantum wells
    Meyer, M.
    Schmid, S.
    Jabeen, F.
    Bastard, G.
    Hartmann, F.
    Hoefling, S.
    PHYSICAL REVIEW B, 2021, 104 (08)
  • [27] Exploring the phase diagram of InAs/GaSb/InAs trilayer quantum wells
    Schmid, S.
    Meyer, M.
    Jabeen, F.
    Bastard, G.
    Hartmann, F.
    Hoefling, S.
    PHYSICAL REVIEW B, 2022, 105 (15)
  • [28] Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
    Krishtopenko, S. S.
    Ikonnikov, A. V.
    Maremyanin, K. V.
    Bovkun, L. S.
    Spirin, K. E.
    Kadykov, A. M.
    Marcinkiewicz, M.
    Ruffenach, S.
    Consejo, C.
    Teppe, F.
    Knap, W.
    Semyagin, B. R.
    Putyato, M. A.
    Emelyanov, E. A.
    Preobrazhenskii, V. V.
    Gavrilenko, V. I.
    SEMICONDUCTORS, 2017, 51 (01) : 38 - 42
  • [29] Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
    Tsatsulnikov, AF
    Ledentsov, NN
    Maksimov, MV
    Meltser, BY
    Neklyudov, PV
    Shaposhnikov, SV
    Volovik, BV
    Krestnikov, IL
    Sakharov, AV
    Bert, NA
    Kopev, PS
    Alferov, ZI
    Bimberg, D
    SEMICONDUCTORS, 1997, 31 (01) : 55 - 57
  • [30] Images of Edge Current in InAs/GaSb Quantum Wells
    Spanton, Eric M.
    Nowack, Katja C.
    Du, Lingjie
    Sullivan, Gerard
    Du, Rui-Rui
    Moler, Kathryn A.
    PHYSICAL REVIEW LETTERS, 2014, 113 (02)
12345