Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

被引：14
|
作者：
Nicholas, RJ [1 ]
Shields, PA [1 ]
Child, RA [1 ]
Li, LJ [1 ]
Alphandéry, E [1 ]
Mason, NJ [1 ]
Bumby, C [1 ]
机构：
[1] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期
关键词：
quantum dots; quantum well; MOVPE; InSb; InAs; GaSb;
D O I：
10.1016/j.physe.2003.08.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：204 / 210
页数：7
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