Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

被引：0

作者：

Asami, T. ^{[1
]}

Nosho, H. ^{[1
]}

Li, L. H. ^{[2
]}

Harmand, J. C. ^{[2
]}

Lu, S. L. ^{[3
]}

Tackeuchi, A. ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Sci, Shinjuku Ku, Tokyo 1698555, Japan

[2] CNRS, Lab Photon Nanostruct, F-91460 Marcoussis, France

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

GaInNAsSb/GaNAsSb/GaAs; Quantum well; Excitons; Spin relaxation time; MOLECULAR-BEAM EPITAXY; POLARIZATION; DYNAMICS;

D O I：

10.1063/1.3666552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn0.36N0.006AsSb0.015 well, 5-nm-thick GaN0.01AsSb0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

引用

页数：2

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