Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

被引：0
|
作者：
Asami, T. [1 ]
Nosho, H. [1 ]
Li, L. H. [2 ]
Harmand, J. C. [2 ]
Lu, S. L. [3 ]
Tackeuchi, A. [1 ]
机构：
[1] Waseda Univ, Dept Appl Sci, Shinjuku Ku, Tokyo 1698555, Japan
[2] CNRS, Lab Photon Nanostruct, F-91460 Marcoussis, France
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
GaInNAsSb/GaNAsSb/GaAs; Quantum well; Excitons; Spin relaxation time; MOLECULAR-BEAM EPITAXY; POLARIZATION; DYNAMICS;
D O I：
10.1063/1.3666552
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn0.36N0.006AsSb0.015 well, 5-nm-thick GaN0.01AsSb0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.
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页数：2
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