Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

被引：0

作者：

Asami, T. ^{[1
]}

Nosho, H. ^{[1
]}

Li, L. H. ^{[2
]}

Harmand, J. C. ^{[2
]}

Lu, S. L. ^{[3
]}

Tackeuchi, A. ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Sci, Shinjuku Ku, Tokyo 1698555, Japan

[2] CNRS, Lab Photon Nanostruct, F-91460 Marcoussis, France

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

GaInNAsSb/GaNAsSb/GaAs; Quantum well; Excitons; Spin relaxation time; MOLECULAR-BEAM EPITAXY; POLARIZATION; DYNAMICS;

D O I：

10.1063/1.3666552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn0.36N0.006AsSb0.015 well, 5-nm-thick GaN0.01AsSb0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

引用

页数：2

共 50 条

[1] Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
Ha, W
Gambin, V
Wistey, M
Bank, S
Yuen, H
Kim, S
Harris, JS
ELECTRONICS LETTERS, 2002, 38 (06) : 277 - 278
[2] Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs band offsets
Yuen, HB
Kudrawiec, R
Ryczko, K
Bank, SR
Wistey, MA
Bae, HP
Misiewicz, J
Harris, JS
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 105 - 111
[3] Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
Li, LH
Sallet, V
Patriarche, G
Largeau, L
Travers, L
Harmand, JC
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 58 - 62
[4] Carrier Leakage in GaInNAsSb Quantum Well Lasers
Ferguson, J. W.
Smowton, P. M.
Blood, P.
Gupta, J. A.
Aers, G. C.
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2147 - +
[5] Thermally induced relaxation in GaInNAsSb quantum well structures
Pickett, Evan
Bank, Seth
Yuen, Homan
Bae, Hopil
Sarmiento, Tomas
Marshall, Ann
Harris, James
SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, 2007, 994 : 105 - +
[6] Carrier mobility dependence of electron spin relaxation in GaAs quantum wells
Terauchi, R
Ohno, Y
Adachi, T
Sato, A
Matsukura, F
Tackeuchi, A
Ohno, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2549 - 2551
[7] Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 μm
Yuen, HB
Bank, SR
Wistey, MA
Harris, JS
Moto, A
JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6375 - 6381
[8] Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well
M. Ono
S. Matsuzaka
Y. Ohno
H. Ohno
Journal of Superconductivity and Novel Magnetism, 2010, 23 : 131 - 133
[9] Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well
Ono, M.
Matsuzaka, S.
Ohno, Y.
Ohno, H.
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2010, 23 (01) : 131 - 133
[10] Spin relaxation in GaAs multiple quantum wells: Well width dependence
Perozzo, P
Miller, A
QUANTUM WELL AND SUPERLATTICE PHYSICS VI, 1996, 2694 : 51 - 58

← 1 2 3 4 5 →